Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device
US8038794B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 15, 2005 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Aug 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.