Scattering bar OPC application method for sub-half wavelength lithography patterning

US8039180B2 · kind B2 · utility

Assignee

• ASML Masktools B.V. · NL

Inventors

• Thomas Laidig · Richmond, US
• Kurt E. Wampler · Sunnyvale, US
• Douglas Van Den Broeke · Sunnyvale, US
• Jang Fung Chen · Cupertino, US

Key dates

• Filing date: Feb 22, 2011
• Grant date: Oct 18, 2011
• Expiry date: Feb 22, 2031

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/36
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.