Technique for forming embedded metal lines having increased resistance against stress-induced material transport

US8039395B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Moritz Andreas Meyer · Pulheim, DE
• Hans-Juergen Engelmann · Dresden, DE
• Ehrenfried Zschech · Radebeul, DE
• Peter Huebler · Coswig, DE

Key dates

• Filing date: Dec 10, 2004
• Grant date: Oct 18, 2011
• Expiry date: Apr 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An alloy forming dopant material is deposited prior to the formation of a copper line, for instance by incorporating the dopant material into the barrier layer, which is then driven into the vicinity of a weak interface by means of a heat treatment. As indicated by corresponding investigations, the dopant material is substantially transported to the weak interface through grain boundary regions rather than through the bulk copper material (copper grains), thereby enabling moderately high alloy concentrations in the vicinity of the interface while maintaining a relatively low overall concentration within the grains. The alloy at the interface reduces electromigration along the interface.