Phase change memory cell with heater and method therefor
US8043888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2008 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jun 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.