finFETS and methods of making same

US8043920B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kevin K. Chan · Staten Island, US
• Thomas S. Kanarsky · Hopewell Junction, US
• Jinghong Li · Poughquag, US
• Christine Qiqing Ouyang · Yorktown Heights, US
• Dae-Gyu Park · Seojong-myeon, KR
• Zhibin Ren · Hopewell Junction, US
• Xinhui Wang · Poughkeepsie, US
• Haizhou Yin · Poughkeepsie, US

Key dates

• Filing date: Sep 17, 2009
• Grant date: Oct 25, 2011
• Expiry date: Jan 9, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.