Dual frequency low temperature oxidation of a semiconductor device
US8043981B2 · kind B2 · utility
4Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2010 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.