Ultra-thin ohmic contacts for p-type nitride light emitting devices

US8044425B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Mark Raffetto · Lompoc, US
• Jayesh Bharathan · Lompoc, US
• Kevin Haberern · Cary, US
• Michael John Bergmann · Atlanta, US
• David T. Emerson · Durham, US
• James Ibbetson · Lompoc, US
• Ting Li · Ventura, US

Key dates

• Filing date: Jul 27, 2005
• Grant date: Oct 25, 2011
• Expiry date: Feb 2, 2028

Classification

• Technology area (CPC —): General

Abstract

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.