Method of forming a semiconductor device
US8048791B2 · kind B2 · utility
122Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Nov 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.