Feature dimension measurement
US8049213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.