Patent · US Active

Method for prediction of premature dielectric breakdown in a semiconductor

US8053257B2 · kind B2 · utility

2Cited by

16References

11Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Kaushik Chanda · Fishkill, US
Hazara S. Rathore · Stormville, US
Paul S. McLaughlin · Poughkeepsie, US
Robert D. Edwards · Marlboro, US
Lawrence A. Clevenger · Saratoga Springs, US
Andrew P. Cowley · Wappingers Falls, US
Chih-Chao Yang · Glenmont, US
Conrad A. Barile · Wappingers Falls, US

Key dates

Filing date	Apr 2, 2008
Grant date	Nov 8, 2011
Priority date	—
Expiry date	Jun 23, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG06F2119/06
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multiple modes can be calculated, a best mode that most accurately represents dielectric breakdown for the semiconductor wafer lot is determined. Premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation from the best calculated mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.