Interconnect structure for integrated circuits having improved electromigration characteristics

US8056039B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kaushik Chanda · Fishkill, US
• Ronald G. Filippi · Wappingers Falls, US
• Stephan Grunow · Poughkeepsie, US
• Chao-Kun Hu · Somers, US
• Sujatha Sankaran · New Paltz, US
• Andrew H. Simon · Fishkill, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: May 29, 2008
• Grant date: Nov 8, 2011
• Expiry date: Jun 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure for an integrated circuit (IC) device includes an elongated, electrically conductive line comprising one or more segments formed at a first width, w1, and one or more segments formed at one or more additional widths, w2 . . . wN, with the first width being narrower than each of the one or more additional widths; wherein the relationship of the total length, L1, of the one or more conductive segments formed at the first width to the total lengths, L2 . . . LN, of the one or more conductive segments formed at the one or more additional widths is selected such that, for a given magnitude of current carried by the conductive line, a critical length with respect to an electromigration short-length effect benefit is maintained such that a total length of the conductive line, L=L1+L2+ . . . +LN, meets a minimum desired design length regardless of the critical length.