Patent · US Active

Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance

US8058731B2 · kind B2 · utility

0Cited by

2References

13Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Moritz Andreas Meyer · Pulheim, DE
Matthias Lehr · Dresden, DE
Eckhard Langer · Radebeul, DE

Key dates

Filing date	Dec 7, 2007
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Jan 21, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31678
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.