Patent · US Active

On-chip radio frequency shield with interconnect metallization

US8063469B2 · kind B2 · utility

10Cited by

18References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Barth · Munich, DE
Heinrich Koerner · Bruckmühl, DE
Thorsten Meyer · Regensburg, DE
Markus Brunnbauer · Lappersdorf, DE

Key dates

Filing date	Sep 30, 2008
Grant date	Nov 22, 2011
Priority date	—
Expiry date	Jan 11, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/13099
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Structure and method for fabricating a system on chip with an on-chip RF shield including interconnect metallization is described. In one embodiment, the system on chip includes an RF circuitry disposed on a first portion of a top surface of a substrate, and a semiconductor circuitry disposed on a second portion of the top surface of the substrate. An interconnect RF barrier is disposed between the RF circuitry and the semiconductor circuitry, the interconnect RF barrier coupled to a ground potential node.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.