Rewritable memory device based on segregation/re-absorption
US8064247B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Dec 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of a memory material to establish a high resistance state, and by re-absorption of at least a portion of the electrically insulating layer into the memory material to establish a low resistance state. The physical mechanism of programming and erasing includes movement of structure vacancies to form voids, and/or segregation of doping material and bulk material, to create the electrically insulating layer consisting of voids and/or dielectric doping material along an inter-electrode current path between electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.