Patent · US Active

Multi-layer polishing pad for low-pressure polishing

US8066552B2 · kind B2 · utility

6Cited by

102References

31Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Alain Duboust · Sunnyvale, US
Shou-Sung Chang · Mountain View, US
Wei Lu · Fremont, US
Siew Neo · Sunnyvale, US
Yan Wang · Chongqing, CN
Antoine P. Manens · Palo Alto, US
Yongsik Moon · San Mateo, US

Key dates

Filing date	Jan 26, 2005
Grant date	Nov 29, 2011
Priority date	—
Expiry date	Jul 9, 2027

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB24D11/02
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.