Patent · US Active

Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer

US8066896B2 · kind B2 · utility

0Cited by
7References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 15, 2007
Grant dateNov 29, 2011
Priority date
Expiry dateMay 9, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S134/902
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.