Method for the wet-chemical treatment of a semiconductor wafer

US8070882B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Guenter Schwab · Vilshofen an der Donau, DE
• Clemens Zapilko · Burghausen, DE
• Thomas Buschhardt · Burghausen, DE
• Diego Feijoo · Burghausen, DE
• Teruo Haibara · Hikari, JP
• Yoshihiro Mori · Kuwana, JP

Key dates

• Filing date: Dec 3, 2008
• Grant date: Dec 6, 2011
• Expiry date: Aug 26, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02057
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.