Method of fabricating an electromechanical device including at least one active element

US8076169B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Francois Perruchot · Issy-les-Moulineaux, FR
• Bernard Diem · Échirolles, FR
• Vincent Larrey · La Murette, FR
• Laurent Clavelier · Grenoble, FR
• Emmanuel Defay · Saint-Égrève, FR

Key dates

• Filing date: Jun 22, 2009
• Grant date: Dec 13, 2011
• Expiry date: Jun 22, 2029

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0191
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.