Method for fabricating a metal-insulator-metal capacitor

US8076213B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Lian-Hua Shih · Chiayi, TW
• Yi-Ching Wu · Hengshan, TW
• Jiann-Fu Chen · Baoshan, TW
• Ming-Te Chen · Hsinchu, TW
• Chin-Jen Cheng · Taipei, TW

Key dates

• Filing date: Sep 7, 2009
• Grant date: Dec 13, 2011
• Expiry date: Mar 5, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/957

Abstract

A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.