Film formation apparatus and method for using the same
US8080109B2 · kind B2 · utility
4Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2008 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | May 13, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.