Contact scheme for FINFET structures with multiple FINs

US8080838B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Leland Chang · New York, US
• Wilfried E. Haensch · Somers, US
• Meikei Ieong · Wappingers Falls, US
• Ghavam G. Shahidi · Pound Ridge, US
• Huiling Shang · Bethlehem, US

Key dates

• Filing date: May 1, 2009
• Grant date: Dec 20, 2011
• Expiry date: Dec 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0275

Abstract

A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. The structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.