Method of depositing boron nitride and boron nitride-derived materials
US8084105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Feb 1, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45523
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.