Patent · US Active

Test structures for development of metal-insulator-metal (MIM) devices

US8084770B2 · kind B2 · utility

0Cited by

7References

7Claims

0Family size

Assignee

Spansion LLC. · US

Inventors

Steven C. Avanzino · Cupertino, US
Suzette K. Pangrle · Cupertino, US
Manuj Rathor · Milpitas, US
An-Chung Chen · Sunnyvale, US
Sameer Haddad · San Jose, US
Nicholas H. Tripsas · San Jose, US
Matthew S. Buynoski · Palo Alto, US

Key dates

Filing date	Nov 17, 2008
Grant date	Dec 27, 2011
Priority date	—
Expiry date	Nov 17, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/32
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In the present electronic test structure comprising, a conductor is provided, overlying a substrate. An electronic device overlies a portion of the conductor and includes a first electrode connected to the conductor, a second electrode, and an insulating layer between the first and second electrodes. A portion of the conductor is exposed for access thereto.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.