Ultra-thin ohmic contacts for p-type nitride light emitting devices
US8089090B2 · kind B2 · utility
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Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.