Patent · US Active

In situ formed drain and source regions in a silicon/germanium containing transistor device

US8093634B2 · kind B2 · utility

7Cited by

0References

5Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Anthony Mowry · Kyle, US
Andy Wei · Queensbury, US
Andreas Gehring · Dresden, DE
Casey Scott · Dresden, DE

Key dates

Filing date	Feb 27, 2009
Grant date	Jan 10, 2012
Priority date	—
Expiry date	Nov 29, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038

Abstract

By repeatedly applying a process sequence comprising an etch process and a selective epitaxial growth process during the formation of drain and source areas in a transistor device, highly complex dopant profiles may be generated on the basis of in situ doping. Further-more, a strain material may be provided while stress relaxation mechanisms may be reduced due to the absence of any implantation processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.