Metal-insulator-metal-insulator-metal (MIMIM) memory device
US8093680B1 · kind B1 · utility
1Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present memory device includes first and second electrodes, first and second insulating layers between the electrodes, the first insulating layer being in contact with the first electrode, the second insulating layer being in contact with the second electrode, and a metal layer between the first and second insulating layers. Further included may be a first oxide layer between and in contact with the first insulating layer and the metal layer, and a second oxide layer between and in contact with the second insulating layer and the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.