Methods for processing substrates in a dual chamber processing system having shared resources
US8097088B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2011 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Apr 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.