Tellurium precursors for film deposition
US8101237B2 · kind B2 · utility
3Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2009 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Mar 6, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/305
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.