Microlithographic projection exposure apparatus

US8107054B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Michael Totzeck · Schwäbisch Gmünd, DE
• Aksel Goehnermeier · Aalen, DE
• Wolfgang Singer · Aalen, DE
• Helmut Beierl · Heidenheim, DE
• Heiko Feldmann · Aalen, DE
• Hans-Juergen Mann · Oberkochen, DE
• Jochen Hetzler · Aalen, DE

Key dates

• Filing date: Sep 15, 2008
• Grant date: Jan 31, 2012
• Expiry date: May 31, 2030

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/70566
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.