Method for the simultaneous grinding of a plurality of semiconductor wafers
US8113913B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 14, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.