MOSFET using gate work function engineering for switching applications

US8119482B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Anup Bhalla · Santa Clara, US
• Sik Lui · Sunnyvale, US

Key dates

• Filing date: Dec 23, 2010
• Grant date: Feb 21, 2012
• Expiry date: Dec 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/661

Abstract

This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the threshold voltage and shifts the C-Vds characteristics. The reduced Cgd thus achieves the purpose of suppressing the shoot through and resolve the difficulties discussed above. Unlike the conventional techniques, the reduction of the capacitance Cgd is achieved without requiring complicated fabrication processes and control of the recess electrode.