Process for selective growth of films during ECP plating
US8119525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.