Method for low temperature ion implantation
US8124508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.