Trilayer resist organic layer etch
US8124516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2006 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming dual damascene features in a porous low-k dielectric layer is provided. Vias are formed in the porous low-k dielectric layer. An organic planarization layer is formed over the porous low-k dielectric layer, wherein the organic layer fills the vias. A photoresist mask is formed over the organic planarization layer. Features are etched into the organic planarization layer comprising providing a CO2 containing etch gas and forming a plasma from the CO2 containing etch gas, which etches the organic planarization layer. Trenches are etched into the porous low-k dielectric layer using the organic planarization layer as a mask. The organic planarization layer is stripped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.