Plasma processing apparatus, focus ring, and susceptor
US8124539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.