Substrate pretreatment for subsequent high temperature group III depositions
US8138069B2 · kind B2 · utility
3Cited by
75References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2010 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.