Patent · US Active

Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes

US8143133B2 · kind B2 · utility

3Cited by

7References

23Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Jan Hoentschel · Dresden, DE
Thomas Feudel · Radebeul, DE
Ralf Illgen · Dresden, DE

Key dates

Filing date	Nov 23, 2009
Grant date	Mar 27, 2012
Priority date	—
Expiry date	Dec 19, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/015
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

During the fabrication of advanced transistors, significant dopant diffusion may be suppressed by performing a millisecond anneal process after completing the basic transistor configuration, wherein a stress memorization technique may also be obtained by forming a strain-inducing area within a sidewall spacer structure. Due to the corresponding void formation in the spacer structure, a high tensile strain component may be obtained in the adjacent channel region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.