Fabrication of a diffusion barrier cap on copper containing conductive elements
US8143157B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Oct 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a self-aligned diffusion-barrier cap on a Cu-containing conductive element in an integrated-circuit device comprises:—providing a substrate having a Cu-containing conductive element embedded laterally into a dielectric layer and having an exposed surface;—depositing a metal layer on the exposed surface of conductive element;—inducing diffusion of metal from the metal layer into a top section of the conductive element;—removing the remaining metal layer;—letting diffused metal in the top section of the conductive element and particles of a second constituent react with each other so as to build a compound covering the conductive element. The metal of the metal layer and the second constituent are chosen so that the compound forms a diffusion barrier against Cu diffusion. A reduction the dielectric constant of the dielectric material in an interconnect stack of an integrated-circuit device is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.