Semiconductor structure and method for making same

US8148257B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Barth · Munich, DE
• Gottfried Beer · Nittendorf, DE
• Joern Plagmann · Munich, DE
• Jens Pohl · San Luis Obispo, US
• Werner Robl · Regensburg, DE
• Rainer Steiner · Regensburg, DE
• Mathias Vaupel · Regensburg, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Apr 3, 2012
• Expiry date: Sep 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over the second barrier layer; removing a portion of the seed layer to leave a remaining portion of the seed layer and to expose a portion of the second barrier layer; and electroplating a fill layer on the remaining portion of the seed layer.