Trench-shielded semiconductor device
US8148749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jan 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed in the semiconductor region and around the first area, and a plurality of trenches extending in a semiconductor region. Each trench haves a first end disposed in a first portion of the well region, a second end disposed in a second portion of the well region, and a middle portion between the first and second ends and disposed in the first area. Each trench further having opposing sidewalls lined with a dielectric layer, and a conductive electrode disposed on at least a portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.