High efficiency group III nitride LED with lenticular surface
US8154039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2009 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Mar 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.