Patent · US Active

Topography reduction and control by selective accelerator removal

US8158532B2 · kind B2 · utility

30Cited by
80References
70Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2006
Grant dateApr 17, 2012
Priority date
Expiry dateMay 4, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76877
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.