Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
US8159042B2 · kind B2 · utility
7Cited by
14References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2008 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jun 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.