Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation

US8169024B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Pranita Kulkarni · Slingerlands, US
• Ghavam G. Shahidi · Pound Ridge, US

Key dates

• Filing date: Aug 18, 2009
• Grant date: May 1, 2012
• Expiry date: Mar 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

A method of fabricating a semiconductor device is provided in which the channel of the device is present in an extremely thin silicon on insulator (ETSOI) layer, i.e., a silicon containing layer having a thickness of less than 10.0 nm. In one embodiment, the method may begin with providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A in-situ doped semiconductor material is formed on the first semiconductor layer adjacent to the gate structure. The dopant from the in-situ doped semiconductor material is then diffused into the first semiconductor layer to form extension regions. The method is also applicable to finFET structures.