Methods for reducing UV and dielectric diffusion barrier interaction
US8173537B1 · kind B1 · utility
25Cited by
51References
21Claims
0Family size
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Key dates
| Filing date | Mar 29, 2007 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.