Method of selectively forming a conductive barrier layer by ALD

US8173538B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Frank Feustel · Dresden, DE
• Carsten Peters · Dresden, DE
• Thomas Foltyn · Zwickau, DE

Key dates

• Filing date: Jun 1, 2007
• Grant date: May 8, 2012
• Expiry date: Mar 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76844
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or suppressing a deposition above unwanted surface areas, such as the bottom of a via in advanced metallization structures of highly scaled semiconductor devices.