High efficiency group III nitride LED with lenticular surface
US8174037B2 · kind B2 · utility
4Cited by
101References
22Claims
0Family size
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Key dates
| Filing date | Mar 17, 2005 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | May 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.