Film formation method and apparatus for semiconductor process
US8178448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.