Monolithically integrated IR imaging using rare-earth up conversion materials

US8178841B2 · kind B2 · utility

Assignee

• Translucent LLC · US

Inventors

• Andrew Clark · Shrewsbury, US
• Robin Smith · Palo Alto, US
• Richard Hamilton Sewell · Los Altos, US
• Scott Semans · Palo Alto, US

Key dates

• Filing date: Jul 28, 2009
• Grant date: May 15, 2012
• Expiry date: Apr 3, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.