Robin Smith
13Patents
4h-index
8Co-inventors
45Inventor score
Filing activity: Mar 20, 2009 → Jan 23, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8501635B1 | Modification of REO by subsequent III-N EPI process | Electricity | 8 | Active |
| US8878188B2 | REO gate dielectric for III-N device on Si substrate | Electricity | 7 | Active |
| US8748900B1 | Re-silicide gate electrode for III-N device on Si substrate | Electricity | 7 | Active |
| US8394194B1 | Single crystal reo buffer on amorphous SiOx | Electricity | 5 | Active |
| US8049100B2 | Multijunction rare earth solar cell | Emerging Cross-Sectional Technologies | 2 | Active |
| US8542437B1 | Earth abundant photonic structures | Electricity | 1 | Active |
| US9105471B2 | Rare earth oxy-nitride buffered III-N on silicon | Electricity | 1 | Active |
| US8039736B2 | Photovoltaic up conversion and down conversion using rare earths | Emerging Cross-Sectional Technologies | 1 | Active |
| US8039738B2 | Active rare earth tandem solar cell | Emerging Cross-Sectional Technologies | 1 | Active |
| US8178841B2 | Monolithically integrated IR imaging using rare-earth up conversion materials | Emerging Cross-Sectional Technologies | 0 | Active |
| US9139934B2 | REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate | Electricity | 0 | Active |
| US8039737B2 | Passive rare earth tandem solar cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US9236249B2 | III-N material grown on REN epitaxial buffer on Si substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.